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Electrical Characterisation of Shallow Pre-Amorphised +n junctions in silicon

Published online by Cambridge University Press:  26 February 2011

S. D. Brotherton ,
J. R. Ayres ,
J. B. Clegg  and
B. J. Goldsmith
S. D. Brotherton
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
J. R. Ayres
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
J. B. Clegg
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
B. J. Goldsmith
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
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Abstract

An examination of Si+ pre-amorphised p+n structures as a function of Si+ implantation energy and solid phase epitaxial regrowth temperature has revealed three different classes of defect all of which may influence the characteristics of the junction. They are point defects responsible for high concentrations of deep level donors, and interstitial dislocation loops both causing leakage current degradation, and excess silicon interstitials leading to enhanced junction movement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 161
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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