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Electrical Characterisation of P-Type CdxHg1−xTe Grown by Movpe

Published online by Cambridge University Press:  21 February 2011

Anne Royle ,
J S Gough ,
S J C Irvine  and
J B Mullin
Anne Royle
Affiliation:
Royal Signals & Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
J S Gough
Affiliation:
Royal Signals & Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
S J C Irvine
Affiliation:
Royal Signals & Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
J B Mullin
Affiliation:
Royal Signals & Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
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Abstract

The results of electrical characterisation of a series of MOVPE layers of CdxHg1−xTe (CMT) grown by the interdiffused multilayer process (IMP) are reported. It is shown that the properties of the CMT layers when grown as a “sandwich” between CdTe buffer and cap layers display classical p-type Hall effect curves. These have been modelled and the sensitivity of the fitting parameters are reported. It is shown that there is evidence of complex (“anomalous”) two-layer like behaviour in low x material which is not attributable to inversion behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 285
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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