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Electrical and Optical Properties of Nano-Crystalline GaN and Nano-Crystalline GaN:H thin Films

Published online by Cambridge University Press:  15 February 2011

S. Kobayashi ,
S. Nonomura ,
K. Abe ,
T. Gotoh ,
S. Hirata ,
S. Nitta  and
Y. Kanemitsu
S. Kobayashi
Affiliation:
Department of Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu, 501–11, Japan
S. Nonomura
Affiliation:
Department of Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu, 501–11, Japan
K. Abe
Affiliation:
Department of Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu, 501–11, Japan
T. Gotoh
Affiliation:
Department of Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu, 501–11, Japan
S. Hirata
Affiliation:
Department of Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu, 501–11, Japan
S. Nitta
Affiliation:
Department of Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu, 501–11, Japan
Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki, 305, Japan
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Abstract

Nano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 °C and 600 °C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 °C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10−4 cm2/V-s. Thermal annealing at 800 °C improves the field effect mobility to 10−2 cm2/V-s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 373
Copyright
Copyright © Materials Research Society 1997

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References

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