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Electrical and Optical Properties of Indium Doped Zinc Oxide Films Prepared by Atmospheric Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  28 February 2011

Jianhua Hu  and
Roy G. Gordon
Jianhua Hu
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
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Abstract

Indium doped zinc oxide films have been deposited from diethyl zinc, ethanol and trimethyl indium in the temperature range between 225°C and 450°C in a laminar flow atmospheric chemical vapor deposition reactor. Both doped and undoped films were crystalline. The doped films have electron density up to 9×1020 cm-3, conductivity up to 850 Ω-1cm-1, and mobility up to 8 cm2/Vs. The indium doping increases the average visible absorption from less than 1% to above 20%. The transparency and conductivity of indium doped zinc oxide films are lower than those of fluorine doped films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 891
Copyright
Copyright © Materials Research Society 1993

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References

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