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Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN

Published online by Cambridge University Press:  01 February 2011

Michael R. Hogsed ,
Mo Ahoujja ,
Mee-Yi Ryu ,
Yung Kee Yeo ,
James C. Petrosky  and
Robert L. Hengehold
Michael R. Hogsed
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, Ohio.
Mo Ahoujja
Affiliation:
Department of Physics, University of Dayton, Dayton, Ohio.
Mee-Yi Ryu
Affiliation:
University of Dayton Research Institute, Dayton, Ohio.
Yung Kee Yeo
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, Ohio.
James C. Petrosky
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, Ohio.
Robert L. Hengehold
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, Ohio.
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Abstract

The optical and electrical properties of Si doped GaN and Al0.20Ga0.80N films irradiated with 1 MeV electrons at a fluence of 1×1017 cm−2 are investigated using cathodoluminescence (CL), variable-temperature Hall-effect, and deep level transient spectroscopy (DLTS) measurements. The CL spectra measured at 6 K show peak luminescence intensity of the near band edge decreases, on average, by 50% after electron irradiation, indicating the creation of non-radiative recombination centers which are stable at room temperature. At room temperature, the free carrier concentration decreases significantly in both the GaN and AlGaN samples following the irradiation, and the carrier removal rate depends strongly on the initial carrier concentration. DLTS measurements show three electron traps in the as-grown Al0.20Ga0.80N. Following 1 MeV electron irradiation of the Al0.20Ga0.80N sample, three additional electron traps labeled R2, R3, and R4 are observed. The first two traps appear to correspond to radiation-induced traps reported in GaN while the latter appears to be unique to AlGaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.35
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCE

1. Zhang, A. P., Han, J., Ren, F., Waldrip, K. E., Abernathy, C. R., Luo, B., Dang, G., Johnson, J. W., Lee, K. P., and Pearton, S. J., Elechtochem. Solid-State Lett. 4, 39–G41 (2001).Google Scholar
2. Walker, D., Kumar, V., Mi, K., Sandvik, P., Kung, P., Zhang, X. H., and Razeghi, M., Appl. Phys. Lett. 76, 403 (2000).Google Scholar
3. Schremer, A. T., Smart, J. A., Wang, Y., Ambacher, O., MacDonald, N. C., and Shealy, J. R. Appl. Phys. Lett. 76, 736 (2000).Google Scholar
4. Look, D.C., Reynolds, D.C., Hemsky, J.W., Sizelove, J.R., Jones, R.L., and Molnar, R.J., Phys. Rev. Lett. 79, 2273 (1997)Google Scholar
5. Look, D.C., Fang, Z., and Polenta, L., Internet J. Nitride Semicond. Res. 5S1, W10.5 (2000)Google Scholar
6. Chow, K.H., Watkins, G.D., Usui, A., and Mizuta, M., Phys. Rev. Lett. 85, 2761 (2000)Google Scholar
7. Saarinen, K., Suski, T., Grzegory, I., and Look, D.C., Physica B 308–310, 77 (2001)Google Scholar
8. Look, D.C., Farlow, G. C., Drevinsky, P. J., Bliss, F. D., and Sizelove, J.R., Appl. Phys. Lett. 83, 3525 (2003)Google Scholar
9. Lagersdedt, O. and Monemar, B., J. Appl. Phys. 45, 2266 (1974).Google Scholar
10. Gotz, W., Johnson, N. M.. Bremser, M. D., and Davis, R. F., Appl. Phys. Lett. 69, 2379 1996).Google Scholar
11. Auret, F. D., Goodman, S. A., Koshnick, F. K., Spaeth, J. –M., Beaumont, B., and Gibart, P., Appl. Phys. Lett. 74, 407 (1999).Google Scholar