A technique has been developed for characterizing the disorder present in thin films through the measurement of their low temperature internal friction. The technique utilizes a substrate, in the form of a double paddle oscillator etched from a high purity silicon wafer, onto which the thin film of interest can be deposited. The oscillator possesses an internal friction of 3 × 10−8 at 4 K which is reproducible to within 1% upon thermally cycling to room temperature. This extremely small substrate internal friction coupled with the excellent reproducibility permits measurements of the internal friction of very thin amorphous films, with a 2 tun silica film producing a change in the internal friction of 4 × 10−9. By performing low temperature internal friction measurements on thin silica films with thicknesses ranging from 2 nm to 1000 nm, we have investigated the role of interacting defects in determining the universal nature of the anomalous low temperature thermal and elastic properties of amorphous solids. We have found no evidence for strong interactions between these tunneling defects. Other applications of the oscillator include monitoring of the crystallization of amorphous films through changes in the low temperature internal friction, internal friction measurements and vapor pressure measurements of quenched condensed rare gas solids and amorphous water ice, and internal friction studies of amorphous solids which can only be produced in thin film form.