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EFM Study on Ge Island: Carrier Charge and Storage Effect

Published online by Cambridge University Press:  01 February 2011

Zhen Lin
Affiliation:
zhen.lin@insa-lyon.fr, Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Villeurbanne, France
Pavel Brunkov
Affiliation:
brunkov@mail.ioffe.ru, Technical Institute of the Russian Academy of Sciences, Saint-Pétersbourg, Russian Federation
Xueying Ma
Affiliation:
ma_shirley1@hotmail.com, Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Lyon, France
Franck Bassani
Affiliation:
franck.bassani@im2np.fr, Institut Matériaux Microélectronique Nanosciences de Provence, Marseille, France
Georges Bremond
Affiliation:
georges.bremond@insa-lyon.fr, Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Villeurbanne, France
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Abstract

In this paper, individual Ge nano island on top of a silicon dioxide layer of thermally grown on a n+ type doped silicon (001) substrate have been studied. The charging ability of an individual Ge island was evaluated by EFM two-pass lift mode measurement. Such Ge nano island becomes an iso-potential and behaves as a conductive material after being charged. These charges were directly injected and were trapped homogenous in the isolated Ge island. It is also shown that the dominant charge decay mechanism during discharging of nc-Ge is related to the leakage of these trapped charges. Further more, the retention time of these trapped charges was evaluated and the electrostatic force was also studied by using different tip bias during scan. Such a study should be very useful to the Ge-nc in memory applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Gacem, K., Hdiy, A.EI., and M, Troyon, Berbezier, I., Szkutnik, P.D., Karmous, A., and Ronda, A., J. Appl. Phys. 102, 093704 (2007)Google Scholar
2 Ding, S.A., Ikeda, M., Fukuda, M., Miyazaki, S., Hirose, M., Appl. Phys. Lett. 73, 3881 (1998)Google Scholar
3 Rokhinson, L.P., Guo, L.J., Chou, S.Y., Tsui, D.C., Appl. Phys. Lett. 76, 1591 (2000)Google Scholar
4 Howell, S. W. and Janes, D. B., J. Appl. Phys. 97, 043703 (2005).Google Scholar
5 Terris, B. D., Stern, J. E., Rugar, D., and Mamin, H. J., Phys. Rev. Lett. 63, 2669 (1989).Google Scholar
6 Krauss, T. D. and Brus, L. E., Phys. Rev. Lett. 83, 4840 (1999).Google Scholar
7 Cherniavskaya, O., Chen, L. W., Weng, V., Yuditsky, L., and Brus, L. E., J. Phys. Chem. B 107, 1525 (2003).Google Scholar
8 Thirstrup, C., Sakurai, M., Stokbro, K., Aono, M., Phys. Rev. Lett. 82, 1241 (1999).Google Scholar
9 Berndt, R., Gaisch, R., Gimzewski, J. K., Reihl, B., Schlittler, R. R., Schneider, W. D., Tschudy, M. Science 262, 1425 (1993).Google Scholar
10 Berndt, R. , Gimzewski, J. K., Phys. Rev. B 48, 4746 (1993).Google Scholar
11 Bischoff, M. M. J., Wielen, M. C. M. M. van der, Kempen, H. van, Surf. Sci. 400, 127 (1998).Google Scholar
12 Ito, K. Ohyama, S., Uehara, Y., Ushioda, S., Surf. Sci. 324, 282 (1995).Google Scholar
13 Dumas, P., Syrykh, C., Makarenko, I. V., Salvan, F. S., Europhys. Lett. 40, 447 (1997).Google Scholar
14 Binning, G., Gerber, C. and Quate, C. F., Phys. Rev. Lett. 56, 930 (1989)Google Scholar
15 Lambert, J., Guthmann, C., Saint-Jean, M., Appl. Phys. 93, 5369 (2003).Google Scholar
16 Domansky, K., Leng, Y., Williams, C.C., Janata, J., Petelenz, D., Appl. Phys. Lett. 63, 1513 (1993).Google Scholar
17 Kimura, K., Kobayashi, K., Yamada, H., Matsushige, K., Appl. Surf. Sci. 210, 93 (2003).Google Scholar
18 Nonnenmacher, M., O'Boyle, M.P., Wickramasinghe, H.K., Appl. Phys. Lett. 58, 2921 (1991).Google Scholar
19 Me'lin, T., Deresmes, D., Stie'venard, D., Appl. Phys. Lett. 81, 5054 (2002).Google Scholar
20 Gordon, M.J., Baron, T., Phys. Rev. B 72, 165420 (2005).Google Scholar
21 Marchi, F., Dianoux, R., Smilde, H.J.H., Murd, P., Comin, F., Chevrier, J., J. Electrostatics 66, 538 (2008).Google Scholar
22 Szkutnik, P. D., Karmous, A., Bassani, F., Ronda, A., Berbezier, I., Gacem, K., El Hdiy, A., Troyon, M., E. Phys. J. Appl. Phys., 41, 2, 103 (2008).Google Scholar
23 Dimension, V Scanning Probe Microscope Manual from Vecco Company, 279 (2007)Google Scholar
24 Sarid, S., Scanning Force Microscopy, Oxford University Press, New York, 1994.Google Scholar