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Efficient 18 Å/s Solar Cells with All Silicon Layers Deposited by Hot-Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Eugene Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Yueqin Xu
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Wei Gao
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Brent P. Nelson
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
A.H. Mahan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
R.S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Howard M. Branz
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
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Abstract

Efficient hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes. On an untextured stainless steel (SS) substrate, an initial efficiency of 7.12% is reached, with a stable efficiency of 5.4% after 1000 hours 1 sun light soaking. This initial efficiency is reached by incorporating into the p/i interface about 60 Å of intrinsic a-Si:H “edge” material grown under conditions near the transition to microcrystallinity. This edge layer increases the cell's fill factor from 0.60 to 0.68 and the best open-circuit voltage is about 0.88 V. Using textured Ag/ZnOcoated SS supplied by United Solar Corporation, preliminary results of an all-HWCVD solar cell give an initial efficiency of 8.7 %.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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