Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T23:02:20.946Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Width Transitions on the Reliability of Interconnects

Published online by Cambridge University Press:  17 March 2011

C. S. Hau-Riege ,
C.V. Thompson  and
T.N. Marieb
C. S. Hau-Riege
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
C.V. Thompson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
T.N. Marieb
Affiliation:
Intel Corporation, Portland, OR 97124
Get access

Abstract

Experimental and modeling studies of Al-based interconnects with narrow-to-wide transitions show that the width transition is a site of atomic flux divergence due to the discontinuity in diffusivities between the narrow and wide segments, which have different microstructures. Lifetimes have been experimentally determined for populations of lines with width transitions, which have varying line-width ratios and varying locations of the width transitions with respect to the line end. The electromigration failure rate is increased as the width-transition is moved closer to the electron-source via. Correlation of the effects width transitions on lifetimes allows determination of the critical stress range for void -nucleation failure, which was found to be 600 ± 108 MPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D2.8.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lloyd, J. R. and Smith, P. M., J. Vac. Sci. Technol. A1, 455 (1983).10.1116/1.571946Google Scholar
2. Gleixner, R. J., Clemens, B. M., and Nix, W. D., J. Mater. Res. 12, 8 (1997).10.1557/JMR.1997.0279Google Scholar
3. Thompson, C.V., Riege, S.P., and Andleigh, V.A., AIP Conf. Proceed. 491, 62 (1999).10.1063/1.59926Google Scholar
4. Vaidya, S., Fraser, D. B., Lindenberger, W.S., J. Appl. Phys. 51, 8, (1980).10.1063/1.328269Google Scholar
5. Cho, J. and Thompson, C.V., Appl. Phys. Lett. 54, 25 (1989).Google Scholar
6. Riege, S.P., Thompson, C.V., and Clement, J.J., IEEE Trans. ED 45, 2254 (1998).10.1109/16.725264Google Scholar
7. Park, Y. J., Andleigh, V.K., Thompson, C.V., J. Appl. Phys. 85, No. 7 (1999); http://nirvana.mit.edu/emsim/index.html D2.8.6 6Google Scholar
8. Korhonen, M.A., Børgensen, P., Tu, K.N, Li, C-Y, J. Appl. Phys. 73, 3790 (1993).10.1063/1.354073Google Scholar
9. Hau-Riege, C.S. and Thompson, C.V., to be published in J. App. Phys. (2000).Google Scholar
10. Srikar, V.T. and Thompson, C.V., Appl. Phys. Lett. 74, 37 (1999)10.1063/1.123125Google Scholar