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Effects of Thermal Donor Generation and Annihilation Upon Oxygen Precipitation

Published online by Cambridge University Press:  28 February 2011

S. Hahn ,
S. C. Shatas  and
H. J. Stein
S. Hahn
Affiliation:
Siltec Corporation, Mountain View, CA 94043
S. C. Shatas
Affiliation:
Peak Systems, Fremont, CA 94358
H. J. Stein
Affiliation:
Sandia National Laboratories, Alburquerque, NM 87185
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Abstract

Rapid thermal annealing and furnace annealing steps have been combined to investigate the effects of thermal donor generation and annihilation upon oxygen precipitation in low and high carbon content silicon wafers. Thermal donors were formed by furnace annealing at 450°C. Rapid thermal annealing was performed in 10 s periods at temperatures between 600° and 1000°C and was followed by two step furnace annealing at 700° and 950 °C. Rapid thermal annealing separates the annealing stage for thermal donor removal from that for removal of oxygen precipitate nuclei, and a marked dependence upon carbon is observed for nuclei stability under RTA. Implications of these observations for models of precipitate nuclei are considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 287
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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