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Effects of the Substrate Temperature, Annealing Temperature, and Hydrogen Presence During Sputtering on the Luminescence of Eu-Doped Nanocrystalline Si/SiO2

Published online by Cambridge University Press:  17 March 2011

G. A. Nery ,
L. F. Fonseca ,
H. Liu ,
O. Resto  and
S. Z. Weisz
G. A. Nery
Affiliation:
Physics and Chemistry Department, University of Puerto Rico, Arecibo, PR, USA
L. F. Fonseca
Affiliation:
Physics Department, University of Puerto Rico, San Juan, PR, USA
H. Liu
Affiliation:
Physics Department, University of Puerto Rico, Mayaguez, PR, USA
O. Resto
Affiliation:
Physics Department, University of Puerto Rico, San Juan, PR, USA
S. Z. Weisz
Affiliation:
Physics Department, University of Puerto Rico, San Juan, PR, USA
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Abstract

We synthesized RF co-sputtered Eu2O3, Si and SiO2 on quartz substrates at different temperatures, and with and without the presence of H2 gas during sputtering. The photoluminescence of the samples was measured using both the 514.5nm green line and 457.9nm blue line of an Ar laser. The samples were then annealed, their luminescence remeasured, and the process repeated for a range of temperatures from 470°C to 1084°C. The effects of substrate temperature, presence or absence of H2, annealing, and the use of the green or blue line on the observed luminescence are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.27.1
Copyright
Copyright © Materials Research Society 2001

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References

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