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Effects of Surface Morphology of ITO Thin Film on the Instability of Organic Light Emitting Diodes

Published online by Cambridge University Press:  15 March 2011

Ki-Beom Kim ,
Yoon-Heung Tak ,
Hyoung-Guen Park ,
Kwang-Ho Lee  and
Jong-Ram Lee
Ki-Beom Kim
Affiliation:
OEL Development Gr., PDP Division, LG Electronics 191-1 Kongdandong, Kumi, 730-030, Korea
Yoon-Heung Tak
Affiliation:
OEL Development Gr., PDP Division, LG Electronics 191-1 Kongdandong, Kumi, 730-030, Korea
Hyoung-Guen Park
Affiliation:
OEL Development Gr., PDP Division, LG Electronics 191-1 Kongdandong, Kumi, 730-030, Korea
Kwang-Ho Lee
Affiliation:
Dept. of Material Science and Engineering, POSTECH San 31 Hyojadong, Pohang, 790-784, Korea
Jong-Ram Lee
Affiliation:
Dept. of Material Science and Engineering, POSTECH San 31 Hyojadong, Pohang, 790-784, Korea
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Abstract

Surface roughness of ITO (Indium Tin Oxide) was measured by AFM (Atomic Force Microscope) and the existence of spikes was verified. Then OLED (Organic Light Emitting Diode) devices made from those substrates were fabricated and their electrical properties were measured with an I-V measurement system. There is considerable difference in the reverse leakage current of OLEDs depending on the surface roughness of the substrate. We observed a good correlation of reverse leakage current with Rpv (Peak-to-Valley roughness), but the correlations between reverse leakage current and Ra (Average roughness) and Rrms (Root-Mean-Square roughness) are not as good.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 708: Symposium BB – Organic Optoelectronic Materials, Processing and Devices , 2001 , BB3.24
Copyright
Copyright © Materials Research Society 2002

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References

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