Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-01T11:14:03.130Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Selectively Absorbing Dielectric Layers and Beam Shaping on Recrystallization and Fet Characteristics in Laser Recrystallized Silicon on Amorphous Substrates

Published online by Cambridge University Press:  15 February 2011

G. E. Possin ,
H. G. Parks ,
S. W. Chiang  and
Y. S. Liu
G. E. Possin
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
H. G. Parks
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
S. W. Chiang
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
Y. S. Liu
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
Get access

Abstract

Selective absorption, using patterned dielectric films, and beam shaping were used as means for improving the recrystallization of LPCVD polysilicon islands on fused quartz. IR imaging of the laser heated region was used to optimize and control the recrystallization. MOSFETs were fabricated in laser-recrystallized silicon islands on amorphous substrates using a standard n-channel poly-gate process. Devices with various channel lengths and widths were fabricated, and the dependence of threshold voltage, channel mobility, and leakage on recrystallization conditions and device dimensions was studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 549
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

present address, IBM, East Fishkill

References

REFERENCES

[1]Shvarev, K.M., Baum, B.A., and Gel'd, P.V., “Optical Properties of Liquid Silicon,” Sov. Phys. Solid State, 16, #11, pp. 2111–12 (1975).Google Scholar
[2]Jellison, G.E. Jr. and Lowndes, D.H., “Optical Absorption Coefficient of Silicon at 1.152 microns at Elevated Temperatures,” Appl. Phys. Lett., 41(7), pp. 594–6, (1982).Google Scholar
[3]Hopper, M.A., Clarke, R.A., and Young, L., “Thermal Oxidation of Silicon,” J. Electrochem. Soc., 122, pp. 1216–22, (1975).Google Scholar
[4]Sato, T., “Spectral Emissivity of Silicon,” Jap. J. Appl. Phys., 6, pp. 339–347 (1967).Google Scholar
[5]Kokorowski, S.A., Olsen, G.L., and Hess, L.D., “Thermal Analysis of CW Laser Annealing Beyond the Melt Temperature,” Electron-Beam Solid Interactions and Materials Processing, Gibbons, , Hess, , and Sigmon, ed., (Elsevier North Holland, N.Y., 1981), pp. 139–46.Google Scholar
[6]Johnson, N.M., Biegelsen, D.K., and Moyer, M.D., “Processing and Properties of CW Laser-Recrystallized Silicon Films on Amorphous Substrates,” in Laser and Electron- Beam Solid Interactions and Materials Processing, Hess, Gibbons and Sigmon, ed., (Elsevier North Holland, N.Y. 1981), pp. 463–70.Google Scholar
[7]Biegelsen, D.K., Johnson, N.M., Bartelink, D.J., and Moyer, M.D., “Laser Induced Crystal Growth of Silicon Islands on Amorphous Substrates,” Laser and Electron-Beam Solid Interactions and Materials Processing, Hess, Gibbons and Sigmon, ed.,(Elsevier North Holland, N.Y. 1981), pp. 487–94.Google Scholar
[8]Biegelsen, D.K., Johnson, N.M., Bartelink, D.J., and Moyer, M.D., “Laser Induced Crystal Growth of Silicon Islands on Amorphous Substrates Multilayer Structures,” Appl. Phys. Lett., 38, (3), pp. 150–2 (1981).Google Scholar
[9]Leamy, H.J., Chang, C.C., Baumgart, H., Lemons, R.A., and Cheng, J., “Cellular Growth in Micro-Zone Melted Silicon,” Materials Letters, pp. 33–36 (1982).Google Scholar
[10]Biegelsen, D.K., Johnson, N.M., Neumanich, R.J., Moyer, M.D. and Fennell, L.E., “Correlated Electrical and Microstructural Studies of Recrystallized Silicon Thin Films on Bulk Glass Substrates,” in Laser and Electron-Beam Solid Interactions and Materials Processing, Appleton, and Celler, ed., (Elsevier North Holland, N.Y., 1982), pp. 585–90.Google Scholar
[11]Joseph, , Goodman, W., Introduction to Fourier Optics, (McGraw Hill, N.Y., 1968), pp. 77ff.Google Scholar