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Effects of Se implantation on the compositional disordering of GaAs-AlAs superlattices

Published online by Cambridge University Press:  28 February 2011

T. NAKAMURA ,
S. KOMIYA ,
T. INATA ,
S. MUTO  and
S. HIYAMIZU
T. NAKAMURA
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
S. KOMIYA
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
T. INATA
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
S. MUTO
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
S. HIYAMIZU
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
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Abstract

The LO phonon frequency evaluated from Raman spectra identifies two compositional disordering mechanisms in GaAs-AlAs superlattices. For a high Se dose, the LO phonons of the Al0.5Ga0.5As alloy are observed from the asimplanted samples. That means the compositional disordering occurred just by Se implantation. The probable mechanism for this disordering is the implantation of Ga atoms into the AlAs layer and of Al atoms into the GaAs layer. The superlattices implanted at a low dose are disordered by the subsequent annealing. The mechanism is the enhanced interdiffusion of both Ga and Al atoms between the GaAs and AlAs layers by Se thermal diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 339
Copyright
Copyright © Materials Research Society 1986

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