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Effects of Rapid Thermal Annealing on SiNx Capped MBE GaAs

Published online by Cambridge University Press:  03 September 2012

Akira Ito ,
Akira Usami ,
Hiroyuki Ueda ,
Hiroyuki Kano  and
Takao Wada
Akira Ito
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
Hiroyuki Ueda
Affiliation:
Toyota Central R.&D. Labs. Inc., Nagakute, Aichi 480–11, Japan
Hiroyuki Kano
Affiliation:
Toyota Central R.&D. Labs. Inc., Nagakute, Aichi 480–11, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
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Abstract

Effects of rapid thermal annealing (RTA) with a SiNx encapsulant on molecular beam epitaxial GaAs are studied with deep level transient spectroscopy (DLTS) measurements and x-ray photoelectron spectroscopy (XPS) measurements. The RTA was performed at various temperatures form 800°C to 1100°C for 6sec. The electron trap EL2 is produced by the RTA above 850°C The EL2 depth profile produced after the RTA is fitted with a complementary error function. The SiNx cap layer is more effective to prevent the formation of the EL2 than the SiO* cap layer during the RTA, because the critical temperature of the SiNx cap where the EL2 concentration starts to increase is higher than that of the SiOx cap. Slight increase of the oxidized Ga atoms is observed after the RTA near the cap surface. The enhancement of the EL2 trap is discussed considering the outdiffusion of Ga atoms into the cap layer during the RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 905
Copyright
Copyright © Materials Research Society 1992

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References

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