Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-22T19:19:07.327Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Pre-Gate Oxidation Cleaning and Gettering Upon The Very Thin Oxide Integrity

Published online by Cambridge University Press:  28 February 2011

J. Lee ,
C. Y. Tung ,
S. Hahn  and
P. Chiao
J. Lee
Affiliation:
Integrated Device Technology, Inc., Santa Clara, CA 95051
C. Y. Tung
Affiliation:
Integrated Device Technology, Inc., Santa Clara, CA 95051
S. Hahn
Affiliation:
Siltec Corp., Mountain View, CA 94043
P. Chiao
Affiliation:
Siltec Corp., Mountain View, CA 94043
Get access

Abstract

Various pre-gate oxide cleaning and gettering techniques on the integrity of thin gate oxide were investigated. A 100 Å thick oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. It has been shown that the oxide integrity as measured by time-dependent breakdown and the minority carrier lifetime are very sensitive to the cleaning technique. On the other hand, given adequate cleaning process, different intrinsic gettering schemes may only influence the oxygen precipitation, as well as the minority carrier lifetime, but not the oxide integrity.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 499
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Euzent, B., Boruta, N., Lee, J. and Jenq, C., “Reliability Aspects of a Floating Gate EEPROM,” IRPS, 388–398, 1981.Google Scholar
2. Keersmaecker, R.F De, Hillen, M.W., Heyns, M.M., Haywood, S.K. and Darakchiev, I.S., “VLSI Science and Technology/1984” ed. by Rozgonyi, G. and Bean, K.E., ECS PV 84–5, p301.Google Scholar
3. Borland, J.O. and Deacon, T., Solid State Technology, 27(8), 123–131, Aug. 1984.Google Scholar
4. Hahn, S., Borland, J.O. and Wong, C.C.D., “VLSI Science and Technology/1985/ ed. by Bullis, W.M. and Broydo, S., ECS PV 85–5 p96.Google Scholar