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The effects of PBB on the dielectric properties of BST film

Published online by Cambridge University Press:  26 February 2011

Jin Cheol Kim  and
Jun Rok Oh
Jin Cheol Kim
Affiliation:
ecjin.kim@samsung.com, samsung Electro-Mechanics, R & D Center, 314 Maetan-3dong Yeongtong gu, suwon, N/A, 443-743, Korea, Republic of, 82-31-21-2714
Jun Rok Oh
Affiliation:
dr.jr.oh@samsung.com, samsung electro mechanics, R & D center, Korea, Republic of
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Abstract

The mixture of PbO-Bi2O3-B2O3 (PBB) were formed on the Ba0.5Sr0.5TiO3 (BST) film and the effects of PBB phase on the dielectric properties of the BST film were investigated. The amorphous PBB layer was deposited on the BST film using rf magnetron sputtering and diffused into the film by heat treatment. The PBB phase in BST film was identified by energy dispersive spectrometer (EDS). Dielectric properties of BST film were significantly improved after the diffusion of PBB. The leakage current density of BST film decreased from 3.24×10-5 A/cm2 to 9.45×10-8 A/cm2 at 1.5 V and the dielectric constant increased from 238 to 533. These results show that the diffusion of insulating metal oxide into the ferroelectric thin film can improve the dielectric properties of the film.

Keywords

filmdielectric propertiestransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-07
Copyright
Copyright © Materials Research Society 2006

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