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Effects of O2 Ion Bombardment of Y-Ba-Cu-Oxide during Thin Film Growth

Published online by Cambridge University Press:  25 February 2011

G. Metzger  and
C. B. Fleddermann
G. Metzger
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM. 87131.
C. B. Fleddermann
Affiliation:
Sandia National Laboratories, Div. 1126, PO Box 8500, Albuquerque, NM. 87185 and Center for High Technology Materials, University of New Mexico, Albuquerque, NM. 87131.
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Abstract

Oxygen ion beam bombardment has been studied as a means for incorporating oxygen into thin films of Y-Ba-Cu-oxide either by enhancing the transport of oxygen to substrates during ion-beam sputtering, or by direct incorporation of oxygen with ion-assisted deposition. Optical emission spectroscopy was used to study the ion-beam bombardment of bulk superconducting targets as the oxygen content of the ion beam was varied. This study showed that oxygen did not directly combine with metallic elements in the target to increase the oxygen content of the stream of particles moving toward the substrate. Addition of a second ion beam directing oxygen ions toward the substrate during film growth caused large variations in the stoichiometry of the deposited films. At low oxygen ion currents, no increase in the oxygen content of the films was detected, while at relatively high currents, the oxygen incorporation increased. However, the sputtering of the metallic components of the film increased as the oxygen beam current increased, leading to very low growth rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 623
Copyright
Copyright © Materials Research Society 1990

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References

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