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Effects of Low-Temperature Grown GaAs Intermediate Layers on the Crystalline Quality of GaAs-on-Si Epilayers

Published online by Cambridge University Press:  22 February 2011

T.C. Chong ,
C.C. Phua ,
W.S. Lau  and
L.S. Tan
T.C. Chong
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 0511
C.C. Phua
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 0511
W.S. Lau
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 0511
L.S. Tan
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 0511
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Abstract

The incorporation of low-temperature (LT) GaAs intermediate layers grown at 230°C had been shown to have the effects of improving the crystalline quality of GaAs epilayers on Si. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and reduced the GaAs (004) X-ray diffraction full width at half maximum (FWHM) by 59 arcsecs. The PL results were subsequently confirmed by cathodoluminescence images. The dominant deep level electron trap in the LT-GaAs epilayer grown on Si substrate was the same as that found in LT-GaAs epilayer grown on GaAs substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 393
Copyright
Copyright © Materials Research Society 1994

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References

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