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Effects of Line Width, Thickness and Alloy Temperature on the Breakdown Energy of thin Aluminum Lines

Published online by Cambridge University Press:  25 February 2011

Rahul Jairath ,
Katnesh Gadepallu ,
Brad Bradford ,
James Shibley ,
Egil Castel  and
Rajeeva Lahri
Rahul Jairath
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Katnesh Gadepallu
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Brad Bradford
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
James Shibley
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Egil Castel
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Rajeeva Lahri
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
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Abstract

Reliability issues have assumed greater importance as critical dimensions in microelectronic devices have entered the sub-micron regime. Wafer level reliability tests have been performed to study the breakdown energy of aluminum. 1500Å, 3500Å, 5500Å aluminum films were sputter deposited at 400 °C on oxide-on-silicon substrates. Test structures with line widths varying from 1 μm to 10 μm were defined on the metal film. The aluminum lines were then passivated using a stacked layer of silicon dioxide and silicon nitride. Finally, the substrates were alloyed at temperatures from 400°C to 450 °C. An attempt has been made to minimize process variability effects by processing the substrates through the same process conditions as far as possible. Failure was induced by stressing the metal lines with high DC current densities and at a constant slew rate. The samples were characterized using optical and scanning electron microscopy. Failure analysis of the samples processed under the different conditions will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 723
Copyright
Copyright © Materials Research Society 1992

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References

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