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The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films

Published online by Cambridge University Press:  15 February 2011

Vinay Chikarmane ,
Chandra Sudhama ,
Jiyoung Kim ,
Jack Lee  and
A I Tasch
Vinay Chikarmane
Affiliation:
Microelectronics Research Center, Electrical & Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
Chandra Sudhama
Affiliation:
Microelectronics Research Center, Electrical & Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
Jiyoung Kim
Affiliation:
Microelectronics Research Center, Electrical & Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
Jack Lee
Affiliation:
Microelectronics Research Center, Electrical & Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
A I Tasch
Affiliation:
Microelectronics Research Center, Electrical & Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
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Abstract

The feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memory (ULSI DRAM) applications has been demonstrated. As-deposited films were found to be predominantly pyrochlore; therefore, a subsequent phase transformation-inducing thermal processing step was key to obtaining device quality films. The importance of the thermal budget in optimizing the device characteristics of PZT films is discussed. The importance of the role of Pb compensation in lowering the required thermal budget and significantly enhancing device characteristics is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 297
Copyright
Copyright © Materials Research Society 1992

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References

[1] Parker, L.H. and Tasch, A.F., IEEE Circuits and Devices magazine, pp. 17–26 (1990).Google Scholar
[2] Croteau, A. and Sayer, M., in Proceedings of the 6th.IEEE International Symposium on Applications of Ferroelectrics edited by Wood, V.E., pp. 606–609 (1986).Google Scholar