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The Effects of Interface Roughness on Ellipsometric Measurements of Thin Oxides

Published online by Cambridge University Press:  22 February 2011

Scott T. Dunham  and
Bhawana Agrawal
Scott T. Dunham
Affiliation:
Electrical, Computer and Systems Engineering Department., Boston University, Boston, MA 02215
Bhawana Agrawal
Affiliation:
Electrical, Computer and Systems Engineering Department., Boston University, Boston, MA 02215
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Abstract

Measurements of film thickness using ellipsometry assume all interfaces to be ideally planar. This approximation works well for films much thicker than the roughness of the interfaces. For very thin films. the interface roughness can cause significant errors in thickness measurements. In this paper, we calculate the effect of interface roughness on oxide thickness measurements and use those calculations to account for some of the observed differences between film thickness measurements of thin oxides (< 200 A) as measured by ellipsometry and transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 301
Copyright
Copyright © Materials Research Society 1988

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References

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