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Effects of Growth Temperature on MOCVD-Grown GaAs-ON-Si

Published online by Cambridge University Press:  25 February 2011

S. Nozaki ,
N. Noto ,
M. Okada ,
T. Egawa ,
T. Soga ,
T. Jimbo  and
M. Umeno
S. Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA 95052
N. Noto
Affiliation:
Shin-Etsu Handotai, Annaka, Gunma 379-01, Japan
M. Okada
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
T. Egawa
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
T. Soga
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
T. Jimbo
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
M. Umeno
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
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Abstract

Effects of growth temperature on crystallinity and surface morphology of MOCVD-grown GaAs-on-Si were studied. The FWHM of the (400) x-ray peak in the rocking curve of GaAs-on-Si reduces from 340 to 230 arcs with increasing growth temperature from 650 to 700°C, but further increase of growth temperature does not significantly decrease the FWHM. The surface morphology of GaAs-on-Si grown at higher temperature is scaly and rough. Lower growth temperature is desirable to obtain GaAs-on-Si with good surface morphology. In order to eliminate the trade-off between crystallinity and surface morphology, the three-step growth process is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 235
Copyright
Copyright © Materials Research Society 1989

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References

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