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The EFfects of Elemental Sequence and Pairing on Interdiffusion and Phase Formation of Al-Ge-Ni Ohmic Contacts for (001) GaAs

Published online by Cambridge University Press:  22 February 2011

W. V. Lampert ,
T. W. Haas  and
Paul H. Holloway
W. V. Lampert
Affiliation:
The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7750
T. W. Haas
Affiliation:
The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7750
Paul H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-2066
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Abstract

The growth sequence of Al, Ge, and Ni metals has been shown to dramatically affect the amount of heat treatment time required to convert the ohmic contact metallization from Schottky to ohmic behavior. Interpretation of interdiffusion and phase formation of the Al-Ge, Al-Ni, or Ni-Ge thin film couples were measured. Auger depth profiles and thin film X-ray diffraction were used to determine interdiffusion and phase formation resulting from various types of thermal processing. The effects of interdiffusion and formation of phases such as Ni-Ga, Ni-As, Ni-Ga-Ge, and Ni-As-Ge from the two element metallizations on GaAs will be used to explain the origin of ohmic behavior for the ternary Al-Ge-Ni contacts to GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 261
Copyright
Copyright © Materials Research Society 1993

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References

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