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Effects of Double-Implant on the Epitaxial Growth of Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

L.J. Chen  and
C.W. Nieh
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
C.W. Nieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
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Abstract

Investigation has been made on the effects of double implant of BF2+−As+, BF2+−P+, B+−As+ and B+−P+ on the thermal annealing behaviors of silicon. For specimens with As+ or P+ as the major dopants, the annealing behaviors were similar to those singly implanted with As+ or P+. For samples with BF2+ or B+ as the major impurities, drastic changes in annealing characteristics were found in comparison with BF2+ or B+ single implant specimens. High density twins, including primary twins on all four {111{ planes and twelve types of secondary twins were observed in BF2+−As+ and BF2+−P+ double implant samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 353
Copyright
Copyright © Materials Research Society 1984

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References

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