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Effects of Carbon Grading at the p/i Interface on the Open Circuit Voltage of p-i-n and n-i-p Amophous Silicon Solar Cells

Published online by Cambridge University Press:  26 February 2011

N. T. Tran ,
F. R. Jeffrey  and
D. J. Olsen
N. T. Tran
Affiliation:
Electronic and Information Sector Laboratories, 3M Company St. Paul, Minnesota 55144
F. R. Jeffrey
Affiliation:
Electronic and Information Sector Laboratories, 3M Company St. Paul, Minnesota 55144
D. J. Olsen
Affiliation:
Electronic and Information Sector Laboratories, 3M Company St. Paul, Minnesota 55144
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Abstract

Carbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 545
Copyright
Copyright © Materials Research Society 1987

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References

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