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The Effects of Base Dopant Outdiffusion on Low Frequency Noise Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  10 February 2011

Y.C. Chou ,
G.P. Li  and
C.S. Wu
Y.C. Chou
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine, CA. 92717
G.P. Li
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine, CA. 92717
C.S. Wu
Affiliation:
Microelectronics Division, Hughes Aircraft Company, Torrance, CA 90505
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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

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References

1. Streit, D.C., Oki, A.K., Velebir, J.R., Stolt, K.S. and Umemoto, D., J. Vac. Sci. Technol., B10, 853(1992).Google Scholar
2. Streit, D.C., Oki, A.K., Umemoto, D.K., Velebir, J.R., Stolt, K.S., Yamada, F.M., Saito, Y., Hafizi, M. E., Bui, S. and Tran, L.T., IEEE Electron Device Lett., 12, 471(1991).Google Scholar
3. Hafizi, M. E., Pawlowicz, L.M., Tran, L.T., Umemoto, D.K., Old, A.K., Kim, M.E. and Yen, K.H., Technical Digest of GaAs IC Symposium, 1990, p329.Google Scholar
4. Nakajima, O., Ito, H., Nittono, T. and Nagata, K., Technical Digest of International Electron Device Meeting, 1990, p. 673.Google Scholar
5. Hughes, B., Ferandez, N.G. and Gladstone, J.M., IEEE Trans. Electron Devices, 34, 733(1987).Google Scholar
6. Chen, C.Y., Bayruns, J., bayruns, R.J. and Scheinberg, N., Technical Digest of GaAs IC Symposium, 1988, p289.Google Scholar
7. Siweris, H.J. and Schiek, B., IEEE Trans. Microwave Theory Tech., 33, 233(1985).Google Scholar
8. Costa, D. and Harris, J.S., IEEE Trans. Electron Devices, 39, 2383(1992).Google Scholar
9. Tanaka, H. Shimawaki, , Kasahara, K. and Honjo, K., IEEE Trans. Electron Devices, 40, 1194(1993).Google Scholar
10. Chang, Y-H and Li, G.P., IEEE Trans. Electron Devices, 40, 692(1993).Google Scholar
11. Chou, Y.C., Li, G.P., Wu, C.S., Chu, Peter, Pao, C.K. and Cisco, T.C., Proc. of Mat.Res.Soc.Symp.,378, 777(1995).Google Scholar
12. Ziel, A.Van der, Zhang, X. and Pawlikiewicz, A.H., IEEE Trans. Electron Devices, 33, 1371(1986).Google Scholar
13. Delseny, C., Pascal, F., Jarrix, S., Lecoy, G., Dangla, J. and Dubon-Chevallier, C., IEEE Trans. Electron Devices, 41, 2000(1994).Google Scholar