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Effects of Arsenic Segregation and Electron Trapping on the Capacitance-Voltage Behavior of Polysilicon and Polycide Gates

Published online by Cambridge University Press:  21 February 2011

J. Lin ,
S. Batra ,
K. Park ,
J. Lee ,
S. Banerjee ,
S. Sun ,
J. Yeargain  and
G. Lux
J. Lin
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712
S. Batra
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712
K. Park
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712
J. Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712
S. Banerjee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin TX 78712
S. Sun
Affiliation:
Motorola Inc., Austin TX 78721
J. Yeargain
Affiliation:
Motorola Inc., Austin TX 78721
G. Lux
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
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Abstract

This paper discusses the effects of dopant segregation and electron trapping on the capacitance-voltage characteristics of arsenic-implanted polysilicon and amorphous Si gate MOS structures fabricated with and without a TiSi2 layer. The effects of gate bias, annealing temperature, silicide formation and polysilicon grain microstructure on the C-V characteristics have also been studied. The results show that insufficient arsenic redistribution at 800°C, coupled with carrier trapping at polysilicon grain boundaries and dopant segregation in TiSi2 causes depletion effects in the polysilicon gate and in turn, an anomalous capacitance-voltage behavior. The depletion tends to increase the “effective” gate oxide thickness and thereby degrade MOS device performance. Higher temperature anneals (≥ 900°C) are sufficient to achieve degenerate doping in the polysilicon gates and avoid the depletion effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 195
Copyright
Copyright © Materials Research Society 1990

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