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The Effects of Amorphous Layer Regrowth on Carbon Activation in GaAs and InP

Published online by Cambridge University Press:  22 February 2011

A.J. Moll ,
J.W. Ager III ,
K.M. Yu ,
W. Walukiewicz  and
E.E. Haller
A.J. Moll
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720 Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, CA 94720
J.W. Ager III
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720
K.M. Yu
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720
W. Walukiewicz
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720
E.E. Haller
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720 Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, CA 94720
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Abstract

The effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 325
Copyright
Copyright © Materials Research Society 1994

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References

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