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Effects of Active Ammonia Gas Cracked in Catalytic-CVD on PZT Ferroelectric Capacitors

Published online by Cambridge University Press:  10 February 2011

Toshiharu Minamikawa ,
Yasuto Yonezawa ,
Yoshikazu Fujimori ,
Takashi Nakamura ,
Atsushi Masuda  and
Hideki Matsumura
Toshiharu Minamikawa
Affiliation:
Japan Advanced Institute of Science and Technology, 1–1 Asahidai, Tatsunokuchi, Ishikawa 923–1292, JAPAN, tminami@jaist.ac.jp Industrial Research Institute of Ishikawa, Ro-I Tomizu-machi, Kanazawa, Ishikawa 920–0223, JAPAN
Yasuto Yonezawa
Affiliation:
Industrial Research Institute of Ishikawa, Ro-I Tomizu-machi, Kanazawa, Ishikawa 920–0223, JAPAN
Yoshikazu Fujimori
Affiliation:
Japan Advanced Institute of Science and Technology, 1–1 Asahidai, Tatsunokuchi, Ishikawa 923–1292, JAPAN, tminami@jaist.ac.jp Rohm Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615–8585, JAPAN
Takashi Nakamura
Affiliation:
Rohm Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615–8585, JAPAN
Atsushi Masuda
Affiliation:
Japan Advanced Institute of Science and Technology, 1–1 Asahidai, Tatsunokuchi, Ishikawa 923–1292, JAPAN, tminami@jaist.ac.jp
Hideki Matsumura
Affiliation:
Japan Advanced Institute of Science and Technology, 1–1 Asahidai, Tatsunokuchi, Ishikawa 923–1292, JAPAN, tminami@jaist.ac.jp
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Abstract

We investigated the effects of exposure to active ammonia (NH3) gas generated by catalytic chemical vapor deposition (Cat-CVD) apparatus on ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) capacitors. It is very important to know these effects in order to apply Cat-CVD SiNx films to passivation films for ferroelectric FRAMs. The exposure to active NH3 was carried out for PZT film capacitors with two types of bottom electrodes on Si wafer at various substrate temperatures. The capacitor with Pt/IrO2 bottom electrode peeled off from substrate during exposure over 200°C. On the other hand, the ferroelectricity of the capacitors with IrO2 bottom electrodes gradually degraded from 200°C to 300°C. As a result, it is found that no degradation of the ferroelectricity is detected for exposure below 200°C. It is concluded that the Cat-CVD method is a promising candidate for preparation of the SiNx passivation film on ferroelectrics, since it is a low stressed film with low hydrogen content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 271
Copyright
Copyright © Materials Research Society 2000

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