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Effective Densities of States in Conduction and Valence Bands in a-Si

Published online by Cambridge University Press:  01 January 1993

JoŽE Furlan ,
Franc Smole  and
Pavle PopoviĆ
JoŽE Furlan
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka 25, Ljubljana, Slovenia
Franc Smole
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka 25, Ljubljana, Slovenia
Pavle PopoviĆ
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka 25, Ljubljana, Slovenia
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Abstract

Effective densities of states in conduction and valence band, Nc and Nv, are usually set to a fixed value of 1019 to 1020 cm−3 in all computer simulations of a-Si structures. In this contribution the densities Nc and Nv are analytically expressed for different selected extended states distributions. The derivatives d(lnNc)/dx and d(lnNv)/dx, representing specific terms in transport equations, are expressed as function of position dependent band structure. The effect of an increased disorder in heterojunction is simulated by Gaussian distribution of states in a linearly graded heterojunction region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 363
Copyright
Copyright © Materials Research Society 1993

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References

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