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Effect of TiN Treated by Rapid Thermal Annealing on Properties of BST Capacitors Prepared by RF Magnetron Co-sputter System at Low Substrate Temperature

Published online by Cambridge University Press:  10 February 2011

T. H. Teng ,
C. C. Hwang ,
M. J. Lai ,
S. C. Huang ,
J. S. Chen ,
C. C. Jaing  and
H. C. Cheng
T. H. Teng
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
C. C. Hwang
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
M. J. Lai
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
S. C. Huang
Affiliation:
Mosel Vitelic Inc, Science-Based Industrial Park, Hsinchu, Taiwan, ROC
J. S. Chen
Affiliation:
Precision Instrument Development Center, National Science Council, Hsinchu, Taiwan, ROC
C. C. Jaing
Affiliation:
Precision Instrument Development Center, National Science Council, Hsinchu, Taiwan, ROC
H. C. Cheng
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
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Abstract

In this work, (Ba0.7Sr0.3)TiO3 thin films on Pt/TiN/Ti/Si substrate were deposited by an RF magnetron co-sputter system at 300°C in an Ar+O2 mixed ambient. In the integration of BST capacitors, the diffusion barrier (TiN) under bottom electrodes is one of the key issues. To obtain a stable and excellent diffusion barrier against inter-diffusion between Pt and Si, as well as against being oxidized during BST deposition, TiN was treated by a rapid thermal annealing (RTA) process. Experimental results indicated that proper RTA treatments resulted in a superior TiN barrier layer. In addition, low substrate temperature during BST deposition suppressed the phenomena of inter-diffusion and barrier oxidation. Furthermore, Pt hillocking, another problem during BST deposition because of high thermal budget, was also solved by reducing substrate temperature during BST deposition. The MIM (Pt/BST/Pt) structure was used in the experiments for electrical properties measurement. High dielectric constant (εr =300), low leakage current (l.5×10−8 A/cm2) under 0.1MV/cm, and 10 year lifetime under 1.6MV/cm were achieved with an Ar+O2 mixed ambient at a low substrate temperature (300°C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 37
Copyright
Copyright © Materials Research Society 2000

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