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Effect of Thermal Processing on the Microstructures and Superconducting Properties of YBa2Cu3Oy

Published online by Cambridge University Press:  28 February 2011

K. Gotoh
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
H. Enomoto
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
K. Iida
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
Y. Takano
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
N. Mori
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
H. Ozaki
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
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Abstract

The effect of thermal processing in the sample preparation of YBa2Cu3Oy has been investigated systematically on microstructures and electrical properties. The grain size was found to grow preferably during the cooling process rather than during the sintering process. The high Tc superconducting phase appears around 500 C in this thermal processing. The annealing experiment shows that the grains still grow at low temperature such as 300 °C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Bednorz, J.G. and Muller, K.A., Z. Phys. B64. 189 (1986).Google Scholar
2. Wu, M. K., Ashburn, J. R., Torng, C. J., Hor, R. H., Meng, P. L., Gao, L., Huang, Z. J., Wang, Y.Q. and Chu, C.W., Phys. Rev. Lett. 58, 908 (1987).Google Scholar
3. Hikami, S., Hirai, T. and Kagoshima, S., Jpn. J. Appl. Phys. 26, L314 (1987).Google Scholar
4. Izumi, F., Asano, H., Ishigaki, T., Takayama-Moriuchi, E., Uchida, Y., Watanabe, N. and Nishikawa, T., Jpn. J. Appl. Phys. 26, L649 (1987).Google Scholar
5. Cava, R.J., Battlogg, B., van Dover, R.B., Murphy, D.W., Sunshine, S., Siegrist, T., Remeik, J.P., Rietman, E.A., Zahurak, S. and Espinosa, G.P., Phys. Rev. Lett. 58, 1676 (1987).Google Scholar
6. Hatano, T., Matsushita, A., Nakamura, K., Sakka, Y., Matsumoto, T. and Ogawa, K., Jpn. J. Appl. Phys. 26, L721 (1987).Google Scholar
7. Takayama-Moriuchi, E., Uchida, Y., Ishii, M., Tanaka, T. and Kato, K., Jpn. J. Appl. Phys. 26, L1156 (1987).Google Scholar
8. Takagi, Y., Liang, R., Inaguma, Y. and Nakaura, T., Jpn. J. Appl. Phys. 26, L1266 (1987).Google Scholar
9. Nakazawa, Y., Ishikawa, M., Takabatake, T., Koga, K. and Terakura, K., Jpn. J. Appl. Phys. 26, L796 (1987).Google Scholar