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Effect of thermal annealing on the performance of polysilane based organic light emitting diode

Published online by Cambridge University Press:  01 February 2011

Ranbir Singh  and
Monica Katiyar
Ranbir Singh
Affiliation:
ranbir@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, WL-106, Kanpur, 208016, India
Monica Katiyar
Affiliation:
mk@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, Kanpur, 208016, India
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Abstract

Polysilanes, being ó bonded, are promising materials for emission in ultraviolet/near ultraviolet (UV/NUV) region and exhibit adequate charge mobility for fabricating practical devices. This study contributes to the understanding of the effects of thermal annealing on the performance of organic light-emitting diodes (OLEDs) made of poly (n-butylphenyl-silane) (PS-4). OLEDs having indium tin oxide (ITO)/poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) PEDOT: PSS/poly (n-butylphenylsilane) (PS-4)/lithium fluoride (LiF)/Al device structure were fabricated. PS-4 is spin coated and annealed for one hour at different temperatures (90-120°C). EL Spectra from these devices consists of white emission along with the UV peak. Current density-voltage (J-V), photoluminescence (PL) and electroluminescence (EL) spectra are also measured. White emission is significantly suppressed when PS-4 is annealed at higher temperature and threshold voltage is lowest at 110°C annealing temperature. This is correlated with PL emission and structural properties of PS-4 films. Surface morphology of PS-4 was measured using atomic force microscopy (AFM). The results are explained in terms of effect of annealing of polymer films on interchain interactions.

Keywords

optoelectronicorganicsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1091: Symposium AA – Conjugated Organic Materials–Synthesis, Structure, Device and Applications , 2008 , 1091-AA07-48
Copyright
Copyright © Materials Research Society 2008

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