Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-10T23:36:21.786Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of the Load Resistance in the Linearity and Sensitivity of MIS Position Sensitive Detectors

Published online by Cambridge University Press:  01 February 2011

H. Águas ,
L. Pereira ,
L. Raniero E. Fortunato  and
R. Martins
H. Águas
Affiliation:
Departamento de Ciência dos Materiais/CENIMAT, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica, Portugal
L. Pereira
Affiliation:
Departamento de Ciência dos Materiais/CENIMAT, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica, Portugal
L. Raniero E. Fortunato
Affiliation:
Departamento de Ciência dos Materiais/CENIMAT, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica, Portugal
R. Martins
Affiliation:
Departamento de Ciência dos Materiais/CENIMAT, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica, Portugal
Get access

Abstract

It is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose an electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (≤ 500 Ω), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 kΩ in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A15.6
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]Fortunato, E., Martins, R., Solid State Phenomena, 44-46, 883 (1995).10.4028/www.scientific.net/SSP.44-46.883Google Scholar
[2] Martins, R. and Fortunato, E. in “The Technology and Applications of Amorphous Silicon”, ed. by Street, R., Spring Verlagen, 342 (2000).Google Scholar
[3] One Dimensional PSD, Hamamatsu Cat. No. KPSD1002E03 (2004) Hamamatsu Photonics K.K., Solid State DivisionGoogle Scholar
[4] Arimoto, S., Yamamoto, H., Ohno, H., Hasegawa, H., J. App. Phys., 57, 4778 (1985).10.1063/1.335343Google Scholar
[5] Fortunato, E., Martins, R., Rev. Sci. Instrum., 67, 2702 (1996).10.1063/1.1147098Google Scholar
[6] Henry, J., Livingstone, J., J. Opt. A: Pure Appl. Opt., 4, 1 (2002).10.1088/1464-4258/4/5/307Google Scholar
[7] Martins, R., Teodoro, P., Soares, F., Ferreira, I., Guimarães, N., Fortunato, E., Borges, J., José, G., Groth, A., Schultze, L., Berndt, D., Reichel, F. and Stam, F., Advanced Engineering Materials, 3, 3, 174 (2001).10.1002/1527-2648(200103)3:3<174::AID-ADEM174>3.0.CO;2-#3.0.CO;2-#>Google Scholar
[8]Fortunato, E., Pereira, L., Águas, H., Ferreira, I., Martins, R., Sensors and Actuators A: Physical, 116, 1, 119 (2004).10.1016/j.sna.2004.01.065Google Scholar
[9] Arimoto, S., Yamamoto, H., Ohno, H., Hasegawa, H., Extended Abstracts of the 15th Conference on Solid State Devices and Materials, Tokyo, 197 (1983).Google Scholar
[10] Aguas, H., Fortunato, E., Silva, V., Pereira, L., Martins, R., Thin Solid Films, 403, 26 (2002).10.1016/S0040-6090(01)01655-8Google Scholar
[11] Fortunato, E., Martins, R., Rev. Sci. Instrum., 67, 2702 (1996).10.1063/1.1147098Google Scholar
[12] Fortunato, E., Lavareda, G., Martins, R., Soares, F., Fernandes, L., Sensors and Actuators A, 51, (1996) 135.10.1016/0924-4247(95)01214-1Google Scholar