Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-20T02:20:40.677Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Stresses in Molybdenum Back Contact Film on Properties of CIGSS Absorber Layer

Published online by Cambridge University Press:  01 February 2011

Ankur A. Kadam ,
Anant H. Jahagirdar  and
Neelkanth G. Dhere
Ankur A. Kadam
Affiliation:
Florida Solar Energy Center, University of Central Florida 1679, Clearlake Road, Cocoa, FL-32922 Tel. (321) 638-1000 x 1230, FAX (321) 638-1010, e-mail: akadam@fsec.ucf.edu
Anant H. Jahagirdar
Affiliation:
Florida Solar Energy Center, University of Central Florida 1679, Clearlake Road, Cocoa, FL-32922 Tel. (321) 638-1000 x 1230, FAX (321) 638-1010, e-mail: akadam@fsec.ucf.edu
Neelkanth G. Dhere
Affiliation:
Florida Solar Energy Center, University of Central Florida 1679, Clearlake Road, Cocoa, FL-32922 Tel. (321) 638-1000 x 1230, FAX (321) 638-1010, e-mail: akadam@fsec.ucf.edu
Get access

Abstract

Analysis of CuIn1-x Gax Se2-y Sy (CIGSS) absorber and molybdenum back contact layer was carried out to understand the changes in the microstructure of CIGSS layer as a function of the deposition conditions and the nature of stress in the underlying Mo film. All the depositions were carried out on 10 cm x 10 cm glass substrates. Compressive and tensile stressed molybdenum films were prepared with combinations of deposition parameters; power and pressure. CIGSS absorber layer was prepared by depositing metallic precursors using DC magnetron sputtering followed by selenization and sulfurization. Molybdenum layer deposited at 300 W and 3 x 10 Torr pressure produced compressive stress with compact, well adherent and lower sheet resistance as compared to the tensile stressed film deposited at 200 W and 5 x 10 Torr. The crystallinity of the CIGSS film was found not to depend on the stress in the underlying molybdenum film. However, the adhesion at the Mo/CIGSS as well as gallium profile at the Mo/CIGSS interface were affected by the stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.13
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Granath, K., Rockett, A., Bodegard, M., Nender, C., and Stolt, L., 13th European Photovoltaics Solar Energy Conference, Nice, France, H.S. Stephens & Associates, Felmersham (1995).Google Scholar
2 Orgassa, K., Schock, H.W., Werner, J.H., Thin Solid Films, 387, 431/432 (2003).Google Scholar
3 Vink, T. J., Somers, M. A. J., Daams, J. L. C., and Dirks, A. G., Journal of Applied Physics, 70, 4301 (1991).Google Scholar
4 Vink, T. J., and Zon, J. B. D. van, Journal of Vacuum Science and Technology, A9, 124, (1991).Google Scholar
5 Drusedau, T. P., Klabunde, F., Veit, P., and Hempel, T., Physica. Status. Solidi. 161, 167, (1997).Google Scholar
6 Itoh, M., Hori, M., and Nadahara, S., Journal of Vacuum Science and Technology, B9, 149, (1991).Google Scholar
7 Yamaguchi, T. and Miyagawa, R., Japanese Journal of Applied Physics 30, (9 A), 2069 (1991).Google Scholar
8 Ramanathan, K., Contreras, M.A., Perkins, C.L., Asher, S., Hasoon, F.S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J., Duda, A., Progress in Photovoltaic Research and Application 11, 225 (2003).Google Scholar
9 Tanaka, Y., Akema, N., Morishita, T., Okumura, D., Kushiya, K., Proceedings of the 17th EC Photovoltaic Solar Energy Conference, Munich, October 2001; 989–994.Google Scholar
10 Weiting, R, AIP conference proceeding 462, 3–8 (1999).Google Scholar
11 Dhere, N. G., Ghongadi, S. R., Pandit, M. B., Jahagirdar, A. H. and Scheiman, D., Progress in Photovoltaic: Research and Application, 10, 407–416 (2002).Google Scholar
12 Jahagirdar, A. H., Dhere, N. G., Kulkarni, S. S., Kadam, A. A., Shirolikar, J. S., Moutinho, H., To, B., 31st IEEE PVSC, Th-A2-Po-235, (2005).Google Scholar
13 Kadam, A. A. and Dhere, N. G., To be published in Vacuum Science and technology, July/August issue (2005).Google Scholar