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Effect of Stoichiometry on the Activation of Implanted Si in MBE-grown GaAs on Si

Published online by Cambridge University Press:  28 February 2011

T.S. Kim  and
Y.C. Kao
T.S. Kim
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O.Box 655936, MS 147, Dallas, TX 75265
Y.C. Kao
Affiliation:
Texas Instruments Inc., Central Research Laboratories, P.O.Box 655936, MS 147, Dallas, TX 75265
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Abstract

In this work, activation of Si implanted into GaAs-on-Si layers grown by molecular beam epitaxy (MBE) is studied. We have found that activation efficiency of implanted Si is lower in GaAs on Si than in bulk GaAs and varies widely. By studying the activation of non-amphoteric dopants such as Be and S, we have found that no donor- or acceptor-like defects exist in high concentrations in GaAs on Si and that amphoteric behavior of Si is the major compensation mechanism in MBE-grown GaAs on Si. Increased Si-acceptor concentration and S activation in GaAs on Si are apparently due to a high density of As vacancies which result from a low V(As):III(Ga) flux ratio during growth. The effect of the threading dislocations does not appear to be significant compared to that of As vacancies as no correlation is found between the density of threading dislocations and implanted Si activation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 475
Copyright
Copyright © Materials Research Society 1990

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References

1Shaw, D.W. in Heterostructures on Silicon: One Step Further with Silicon, edited by Nissim, Y.I. and Rosencher, E. (Kluwer Academic Publishers, 1989), p. 61.Google Scholar
2Vernon, S.M., Pearton, S.J., Gibson, J.M., Short, K.T., and Haven, V.E., Appl. Phys. Lett. 50, 1161 (1987).Google Scholar
3Chand, N., Ren, F., Pearton, S.J., Shah, N.J., and Cho, A.Y., IEEE Electron Dev. Lett. EDL–8, 185 (1987).Google Scholar
4Wilson, M.R., Shen, Y.D., Welch, B.M., Lee, J.W., McCullough, R.E., Salerno, J.P., and Fan, J.C.C., in Proceedings of IEEE GaAs IC Symposium 1988, pp. 243–246 (1988).Google Scholar
5Kao, Y.C., Liu, H.Y., Tsai, H.L., Duncan, W.M., Kim, T.S., and Shichijo, H., to be published in J. Vac. Sci. Tech. B Mar/Apr (1990).Google Scholar
6Anholt, R. and Sigmon, T.W., J. Electron. Mat. 17, 5 (1988).Google Scholar
7Otsuki, T. et al. , in Proceedings of Semi-insulating IH-V Materials Conference, edited by (Hakone 1986) p.243 (1986).Google Scholar