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Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

Published online by Cambridge University Press:  21 March 2011

W. K. Loke ,
S. F. Yoon ,
T. K. Ng ,
S. Z. Wang  and
W. J. Fan
W. K. Loke
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
S. F. Yoon
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
T. K. Ng
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
S. Z. Wang
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
W. J. Fan
Affiliation:
Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore
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Abstract

Rapid thermal annealing (RTA) of 1000Å GaNAs films grown on (100) oriented GaAs substrate by radio frequency (RF) plasma assisted solid-source molecular beam epitaxy was studied by low-temperature photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD). Samples with nitrogen content of 13 and 2.2% have shown an overall blueshift in energy of 67.7meV and an intermediate redshift of 42.2meV in the PL spectra when subjected to RTA at 525–850°C for 10min. It is also shown that the sample, which is annealed at temperature range of 700–750°C, has the highest photoluminescence efficiency (1.7–2.1 times increase in integrated PL intensity as compared to the as-grown sample). Reciprocal space mapping of the as-grown GaNAs samples obtained by using triple-crystal HRXRD shows the presence of interstitially incorporated of N atoms with no lattice relaxation in the direction parallel to the growth surface. These results have significant implication on the growth and post-growth treatment of nitride compound semiconductor materials for high performance optoelectronics devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H1.11.1
Copyright
Copyright © Materials Research Society 2002

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