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Effect of Preanneal Heat Treatment on Oxygen Precipitation in Epitaxial Silicon

Published online by Cambridge University Press:  28 February 2011

W. Wijaranakula ,
P. Burke ,
L. Forbes  and
J.H. Matlock
W. Wijaranakula
Affiliation:
Oregon State University, Corvallis, Oregon 97331
P. Burke
Affiliation:
Oregon State University, Corvallis, Oregon 97331
L. Forbes
Affiliation:
Oregon State University, Corvallis, Oregon 97331
J.H. Matlock
Affiliation:
SEH-America, Inc., 4111 Northeast, 112th Avenue, Vancouver, WA 98662
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Abstract

Substrate wafers used for fabrication of P/P+ epitaxial silicon wafers were preanneal heat treated at 650°C in nitrogen ambients prior to the epitaxial deposition process for various periods up to 300 minutes. Subsequently, epitaxial wafers were subjected to CMOS simulation heat treatments. Postepitaxial nucleation heat treatment at 750°C in nitrogen ambient was also done on some epitaxial wafers. The results shows that preanneal heat treatment can preserve precipitate nuclei from dissolution during the epitaxial deposition process and lead to a high bulk defect density. These results also indicate the effect of the thermal history and spatial location in the grown crystal on the bulk defect formation.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 139
Copyright
Copyright © Materials Research Society 1986

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