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Effect of Post Exposed Hydrogen on Chemisorbed Ethylene on Si(100)-(2×l)

Published online by Cambridge University Press:  22 February 2011

Wolf Widdra ,
Chen Huang  and
W. Henry Weinberg
Wolf Widdra
Affiliation:
Department of Chemical Engineering and Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, CA 93106
W. Henry Weinberg
Affiliation:
Department of Chemical Engineering and Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, CA 93106
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Abstract

The effect of post adsorbed atomic hydrogen on the adsorption, desorption, and decomposition of ethylene on Si(100)-(2×l) has been studied using high-resolution electron energy loss spectroscopy (HREELS), temperature programmed desorption (TPD), and low-energy electron diffraction (LEED). Exposures to atomic hydrogen of more than 1015 atoms/cm2 convert the initial (2×l) reconstruction of sp3-hybridized, di-σ bonded ethylene to a (l×l) structure. Furthermore, after post exposure to atomic hydrogen, the thermal desorption peak of molecular ethylene is shifted up by approximately 100 K and reduced in intensity. HREEL spectra for deuterated ethylene show the formation of a C-H bond after exposure to atomic hydrogen, whereas the C-C bond remains intact. We explain our data by an atomic hydrogen-driven conversion of the di-σ bonded ethylene to a mono-σ bonded surface ethyl. Thermal activation after post exposure to atomic hydrogen leads to decomposition of about 60% of the initial ethylene in contrast to the observed molecular desorption in the absence of hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 99
Copyright
Copyright © Materials Research Society 1994

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References

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