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Effect of Polymer Gate Dielectric Surface Viscoelasticity on Pentacene Thin-Film Transistor Performance

Published online by Cambridge University Press:  01 February 2011

Choongik Kim ,
Antonio Facchetti  and
Tobin J. Marks
Choongik Kim
Affiliation:
choongik@gmail.com, Northwestern University, Chemistry, 2145 Sheridan Road, Evanston, IL, 60208-3113, United States, 8474670361
Antonio Facchetti
Affiliation:
a-facchetti@northwestern.edu, Northwestern University, Chemistry, 2145 Sheridan Road, Evanston, IL, 60208-3113, United States
Tobin J. Marks
Affiliation:
t-marks@northwestern.edu, Northwestern University, Chemistry, 2145 Sheridan Road, Evanston, IL, 60208-3113, United States
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Abstract

Pentacene is one of the most studied semiconductor for organic thin-film transistors (OTFTs), and enhanced understanding of pentacene-based TFTs has significantly advanced the organic electronics. We report here the crucial effect of the polymer gate dielectric glass transition temperature (Tg) on pentacene film growth mode, microstructure, and the resulting TFT performance. Nanoscopically-confined thin polymer films are known to exhibit reduced glass-transition temperatures versus the corresponding bulk values, and we demonstrate here that pentacene films grown on polymer gate dielectrics at temperatures well below their bulk Tg exhibit morphological/microstructural transitions and OTFT performance discontinuities at well-defined growth temperatures [defined as the surface Tg, or Tg(s)] characteristic of the underlying polymer structure and independent of the film thickness. The results argue that realistic OTFT response must take into account this fundamental polymer property, and that TFT measurements represent a new probe of polymer surface thermal properties.

Keywords

polymerdielectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1091: Symposium AA – Conjugated Organic Materials–Synthesis, Structure, Device and Applications , 2008 , 1091-AA11-50
Copyright
Copyright © Materials Research Society 2008

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References

1. Dimitrakopoulos, D., Malenfant, P. R. L. Adv. Mater. 14, 99 (2002).Google Scholar
2. Facchetti, A., Yoon, M.H. Marks, T. J. Adv. Mater. 17, 1705 (2005).Google Scholar
3. Yoon, M.H. Kim, C.. Facchetti, A., Marks, T. J. J. Am. Chem. Soc. 128, 12851 (2006).Google Scholar
4. Forrest, J. A. Dalnoki-Veress, K., Dutcher, J. R. Phys. Rev. E 56, 5705 (1997).Google Scholar
5. Ellison, C.J. Torkelson, J.M. Nat. Mater. 2, 695 (2003).Google Scholar
6. Klauk, H., Ed., Organic Electronics: Materials, Manufacturing, and Applications (Wiley-Vch, Weinheim, 2006), chap 2.Google Scholar
7. Sze, S. M. in Physics of Semiconductor Devices, (John Wiley & Sons: New York, 2003).Google Scholar
8. Puntambekar, K., Dong, J., Haugstad, G., Frisbie, C. D. Adv. Funct. Mater. 16, 879 (2006).Google Scholar
9. Steudel, S., Vusser, S. D. Jonge, S. D. Janssen, D., Verlaak, S., Genoe, J., Heremans, P., Appl. Phys. Lett. 85, 4400 (2004).Google Scholar