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Effect of Plasma Treatment of the Tco on a-Si Solar Cell Performance

Published online by Cambridge University Press:  21 February 2011

F. Demichelis ,
R. Galloni ,
A. Madan ,
C.F. Pirri ,
P. Rava ,
M. Ruth ,
R.E.I. Schropp ,
C. Summonte  and
E. Tresso
F. Demichelis
Affiliation:
Dipartimento di Fisica Politecnico, Torino (Italy)
R. Galloni
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
A. Madan
Affiliation:
MV Systems Inc., Golden CO (USA)
C.F. Pirri
Affiliation:
Dipartimento di Fisica Politecnico, Torino (Italy)
P. Rava
Affiliation:
Elettrorava S.p.A., Savonera Torino (Italy)
M. Ruth
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
R.E.I. Schropp
Affiliation:
Dept. Atom. & Interf. Phys.Utrecfit University (The Netherlands)
C. Summonte
Affiliation:
Laboratori CNR-LAMEL, Bologna (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica Politecnico, Torino (Italy)
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Abstract

Single junction a-Si p-i-n solar cells have been deposited by an Ultra High Vacuum (UHV) Multichamber PECVD system reaching an efficiency of 10.1% over 0.1 cm2 and 9.7% over 1 cm2. The effect of hydrogen treatments on the performance of the solar cells was studied on two different types of SnO2 coated substrates and was correlated with the I-V characteristics under AM1.5 (100 mW cm-2) illumination and the spectral response of the devices. The results show that modifications at the TCO/p-layer interface due to the hydrogen plasma treatments are strongly dependent on the initial characteristics of the TCO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 905
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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