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Effect of P-Doping Level-POCl3 Diffused or Spin-On Deposited-On the Gettering Efficiency of Polycrystalline Silicon After RTA or CTA

Published online by Cambridge University Press:  26 February 2011

M. Loghmarti ,
K. Mahfoud ,
J. C. Muller ,
D. Sayah  and
P. Siffert
M. Loghmarti
Affiliation:
Laboratoire de physique des matériaux. Rabat., Morocco.
K. Mahfoud
Affiliation:
Labo. PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg cedex, France.
J. C. Muller
Affiliation:
Labo. PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg cedex, France.
D. Sayah
Affiliation:
Laboratoire de physique des matériaux. Rabat., Morocco.
P. Siffert
Affiliation:
Labo. PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg cedex, France.
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Abstract

Large grain polycrystalline silicon wafers have been subjected to post-thermal annealing after a POCl3 pre-diffusion or after a phosphorus doped silica-film deposition (1019p/cm3- 2.1021p/cm3). The different doping levels are obtained by a dilution of the P-doped SOG (2.1021 at/cm3) in a undoped SOG solution .For the first time we have achieved the maximum of the gettering efficiency after post-thermal annealing. The best combination of post thermal cycle parameters and doping level improves the minority carrier diffusion length of quite (300% to 400%) for POCl3 pre-diffused samples and (200% to 275%) for spin-on P-doped (P-SOG) polycrystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 333
Copyright
Copyright © Materials Research Society 1995

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