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Effect of Oxygen Exposure and Deposition Environment on Thermal Stability of Ta Barriers To Cu Penetration.

Published online by Cambridge University Press:  25 February 2011

N.A. Bojarczuk ,
L.A. Clevenger ,
K. Holloway ,
J.M.E. Harper ,
C. Cabral ,
R.G. Schad  and
L. Stolt
N.A. Bojarczuk
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
L.A. Clevenger
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
K. Holloway
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
J.M.E. Harper
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
C. Cabral
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
R.G. Schad
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

The effect of deposition pressure and controlled oxygen dosing on the diffusion barrier performance of thin film Ta to Cu penetration was investigated. In-situ resistivity, Auger compositional profiling, scanning electron microscopy and cross-sectional transmission electron microscopy were used to determine the electrical, chemical and structural changes that occur in Cu/Ta bilayers on Si upon heating. A 20 nm Ta barrier allowed the penetration of Cu at temperatures ranging from 320 to 630°C depending on processing conditions. Barrier failure temperature is dependent upon the deposition pressure and oxygen contamination at the Ta/Cu interface. This indicates the importance of understanding how deposition conditions affect diffusion barrier performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 387
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Chang, Chin-An and (Hu, Chao-Kin, Apl. Phys. Lett. 57, 617 (1990).Google Scholar
2. Krautz, H., Wcnzel, C.H., Barnkessel, K. and Blasek, G., Phys. Stat. Sol. 110, K77 (1988).Google Scholar
3. Reus, R. De, Koper, R.J.I.M., Zeijlcmraker, H. and Saris, F.W., Matcrials Letters 9, 500 (1990).Google Scholar
4. Hu, C-K., Chang, S., Small, M.B., Lewis, I.E., in Proceedings of the Third International VLSI Multilevel Interconnection Confercnce, June 9. 1986, Santa Clara, CA.Google Scholar
5. Spit, H.M., Gtuta, D., Tu, K.N. and Hu, C.-K., private communication.Google Scholar
6. Holloway, Karen and Iryzr, P. M., Appi. Phys. Lett. 57, 1736 (1990), and Mat. Res. Soc. Symp. Proc. 181, (1990).Google Scholar
7. Solberg, Jan Ketil, Acta Cryst. A34, 684 (1978).Google Scholar