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Effect Of No On The Electrical Characteristics Of SiO2 Grown On P-Type 4H SiC

Published online by Cambridge University Press:  10 February 2011

H. F. Li ,
S. Dimitrijev ,
H. B. Harrison ,
D. Sweatman  and
P. Tanner
H. F. Li
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
S. Dimitrijev
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
H. B. Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
D. Sweatman
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
P. Tanner
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
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Abstract

In this paper the effect of NO nitridation on the electrical characteristics of the oxides grown on p-type 4H SiC has been investigated. The results show that NO nitrided oxide has a lower interfacial trap density and a lower net oxide charge compared to N2 annealed oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 223
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., and Edmond, J. A., Proceedings of the IEEE, 79, 677 (1991)Google Scholar
[2] Afanas'ev, V.V., Stesmans, A., Bassler, M., Pensl, G., Schulz, M. J., and Harris, C. I., Appl. Phys. Lett., 68, 2141(1996)Google Scholar
[3] Stein von Kamienski, E. G., Portheine, F., Stein, J., Golz, A., and Kurz, H., J. Appl. Phys., Vol.79, 2529 (1996)Google Scholar
[4] Shenoy, J. N., Chindalore, G. L., Melloch, M. R., Cooper, J. A. Jr., Palmour, J. W., and Irvine, K. G., J. Electron. Mater., 24, 303 (1995)Google Scholar
[5] Lipkin, L. A and Palmour, J. W., Journal of Electronic Materials, 25, 909 (1996)Google Scholar
[6] Schroder, D. K., Semiconductor Materials and Device Characterization. New York: Wiley, 1990, 274–277 Google Scholar