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Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN
Published online by Cambridge University Press: 17 March 2011
Abstract
The extent of damage recovery by N2 plasma treatment of previously damaged n- and p-GaN has been examined using current-voltage (I-V) characteristics from Schottky diodes. There are two contributions to the observed improvement in the I-V characteristics, namely a simple annealing effect and also a chemical effect from reactive nitrogen. However the N2 plasma treatment does not fully restore the initial electrical properties of the near-surface region.
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- Copyright © Materials Research Society 2001