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Effect of Mechanical Stress on Polycrystalline Diamond Schottky Diode I-V Characteristics

Published online by Cambridge University Press:  25 February 2011

G. Zhao ,
E. M. Charlson ,
E. J. Charlson ,
T. Stacy ,
J. Meese ,
G. Popovici  and
M. Prelas
G. Zhao
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
E. M. Charlson
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
E. J. Charlson
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
T. Stacy
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
J. Meese
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
G. Popovici
Affiliation:
Department of Nuclear Engineering, University of Missouri, Columbia, Missouri 65211
M. Prelas
Affiliation:
Department of Nuclear Engineering, University of Missouri, Columbia, Missouri 65211
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Abstract

Schottky diodes to be used for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode. At selected values of constant forward biased current, a linear relationship between voltage and stress, for stress less than 10 N was observed. The stress sensitivity of the diode was as high as 0.74 V/N at 1 mA forward bias. This study shows that polycrystalline diamond Schottky diodes are stress sensitive devices and have potential as mechanical sensors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992 , 431
Copyright
Copyright © Materials Research Society 1992

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References

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