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The Effect of Line Geometry on Void Growth in Thin, Narrow Aluminum Lines

Published online by Cambridge University Press:  26 February 2011

P. Borgesen ,
J. K. Lee ,
M. A. Korhonen  and
C.-Y. Li
P. Borgesen
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
J. K. Lee
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
M. A. Korhonen
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
C.-Y. Li
Affiliation:
Department of Materials Science & Engineering Cornell University, Ithaca, NY 14853
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Abstract

The stress induced growth of individual voids in passivated Al-lines at room temperature was monitored in-situ without removing the passivation. The kinetics was strongly influenced by variations in line gec.etry, even over distances of many Am, indicating variations in the stress relaxation as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 407
Copyright
Copyright © Materials Research Society 1991

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References

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