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THE EFFECT OF LEVEL MIXING IN Er-DOPED Si
Published online by Cambridge University Press: 10 February 2011
Abstract
We have studied the effect of level mixing on the optical properties of Er in Si by calculating the radiative cross sections of Er in Si under external pressure, and the possibility of enhancing in this way both the luminescence and the excitation efficiency.
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- Research Article
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- Copyright © Materials Research Society 1999