Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-07-01T16:52:26.546Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Lattice Mismatch on the Decay of Rheed Oscillations During Growth of Strained InGaAs/GaAs Heterostructures

Published online by Cambridge University Press:  10 February 2011

Àkos Nemcsics  and
Ferenc RiEsz
Àkos Nemcsics
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P. O. Box 49, H-1525 Budapest, Hungary, E-mail: nemcsics@mfa.kJki.hu
Ferenc RiEsz
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P. O. Box 49, H-1525 Budapest, Hungary
Get access

Abstract

The decay of the oscillation of the intensity of the specular beam of the reflection high-energy electron diffraction pattern is analyzed during the molecular beam epitaxial growth of strained InGaAs/GaAs heteroepitaxial structures. The oscillations' amplitude was found to decrease exponentially versustime during the InGaAs growth. Further, the decay time constant decreases with InAs mole fraction, indicating that the lattice strain increases islanding during growth. A simple semi-quantitative model based on the growth front roughening is formulated to explain the results. Assuming that the oscillation decay is related partly to the strain and partly due to kinetic effects during growth, a decay component that is solely due to strain can be separated; we find that the onset of increased roughening due to misfit strain component roughly corresponds to the equilibrium critical layer thickness

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 225
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Fitzgerald, E. A., Mat. Sci. Rep. 7, 87 (1991).Google Scholar
[2] Ceschin, A. M. and Massies, J., J. Cryst. Growth 114, 693 (1991).Google Scholar
[3] Leem, J.-Y., Lee, C.-R., Noh, S.-K. and Son, J.-S., J. Cryst. Growth 197, 84 (1999).Google Scholar
[4] Grandjean, N. and Massies, J., J. Cryst. Growth 134, 51 (1993).Google Scholar
[5] Riesz, F., Kret, S., Karczewski, G., Wojtowicz, T. and Kossut, J., Acta Phys. Polon. A 90, 911 (1996).Google Scholar
[6] Heyn, Ch., Franke, T., Anton, R. and Harsdorff, H., Phys. Rev. B 56, 13483 (1997).Google Scholar
[7] Papajová, D., Németh, Š. and Veselý, M., In: Heterostructure Epitaxy and Devices, Eds. Novik, J. and Schlachetzki, A. (Kluwer Academic Publishers, Dordrecht, 1996), p. 41.Google Scholar
[8] Nemcsics, Á., Olde, J., Geyer, M., Schnurpfeil, R., Manzke, R. and Skibowski, M., phys. stat. sol. (a) 155, 427 (1996).Google Scholar
[9] Nishinaga, T., Shirata, T. and Mochizuki, K., J. Cryst. Growth 99, 482 (1990).Google Scholar
[10] Irisawa, T., Arima, Y. and Kuroda, T., J. Cryst. Growth 99, 491 (1990).Google Scholar
[11] Lehmpfuhl, G., Ichimiya, A. and Nakahara, H., Surf Sci. Lett. 245, L159 (1991).Google Scholar
[12] Dunstan, D. J., Young, S. and Dixon, R. H., J. Appl. Phys. 70, 3038 (1991).Google Scholar
[13] Nemcsics, Á., Thin Solid Films, in press.Google Scholar
[14] Cullis, A. G., MRS Bull. 21, 21 (1996); D. E. Jesson, K. M. Chen and S. J. Pennycock, MRS Bull. 21, 31 (1996)Google Scholar